DocumentCode
1902632
Title
High-Voltage ESFI-SOS Circuits for LCD-driver Applications
Author
Pomper, M. ; Leîpold, L. ; Weidlich, R.
Author_Institution
SIEMENS AG, Research Laboratories and Components Division, Munich, W.-Germany
fYear
1977
fDate
20-22 Sept. 1977
Firstpage
176
Lastpage
178
Abstract
High-voltage MOS transistors fabricated in an ESFI-SOS technology have been investigated. Breakdown voltages exceeded 120 V. As application 100 V LCD-drivers employing dynamic bootstrap and static push-pull circuit techniques will be presented.
Keywords
Breakdown voltage; Circuit testing; Delay; Doping; Driver circuits; Electric breakdown; Integrated circuit technology; Pulse measurements; Pulse modulation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
Conference_Location
Ulm, F.R. Germany
Print_ISBN
380071132X
Type
conf
Filename
5435082
Link To Document