DocumentCode :
1902906
Title :
Electrostatic effect of localised charge in dual bit memory cells with discrete traps
Author :
Perniola, L. ; Bernardini, S. ; Iannaccone, G. ; De Salvo, B. ; Ghibaudo, G. ; Masson, P. ; Gerardi, C.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Universita degli Studi di Pisa, Italy
fYear :
2004
fDate :
21-23 Sept. 2004
Firstpage :
249
Lastpage :
252
Abstract :
In this paper, the electrostatic impact of channel hot electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristics during forward and reverse read of a written cell is thoroughly analysed with the help of an analytical model. Such a model allows, for the first time, to estimate the effective charged portion of the discrete storage layer, L2, and the quantity of electrons, Q, injected in the trapping sites from the experimental parameters of the Id-Vg characteristics, the reverse-forward threshold voltage shift ΔVRF, and the total threshold voltage shift ΔVtot. The viability of this model is confirmed with tests performed on nanocrystal memories, under different bias conditions. These results are confirmed with the help of a 2D drift-diffusion commercial code (ATLAS-SILVACO).
Keywords :
electron traps; electrostatics; hole traps; hot carriers; nanoelectronics; random-access storage; semiconductor device models; 2D drift-diffusion model; MOSFET channel threshold voltage; channel hot electron injection; discrete storage layer effective charged portion; discrete trap memory cells; dual bit memory cells; localised charge electrostatic effects; nanocrystal memory bias conditions; nonvolatile discrete-trap memory products; reverse-forward threshold voltage shift; trapping sites; written cell forward read; written cell reverse read; Analytical models; Channel hot electron injection; Conductivity; Electron traps; Electrostatics; Integrated circuit modeling; Nanocrystals; Performance evaluation; Testing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
Type :
conf
DOI :
10.1109/ESSDER.2004.1356536
Filename :
1356536
Link To Document :
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