A 40 GHz VCO with 9 to 15% tuning range in 0.13 /spl mu/m SOI CMOS

Author

Fong, N. ; Plouchart, J.-O. ; Zamdmer, N. ; Duixian Liu ; Wagner, L. ; Garry, P. ; Tarr, G.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

fYear

2002

fDate

13-15 June 2002

Firstpage

186

Lastpage

189

Abstract

A 40 GHz fully-monolithic complementary VCO fabricated in IBM 0.13 /spl mu/m partially-depleted SOI CMOS technology is reported. The VCO operates at 1.5 V supply and draws 11.25 mW of power. The measured phase noise at 40 GHz is -109 dBc/Hz at 4 MHz offset from the carrier. At 1.5 V and 2 V V/sub DD/, the tuning range is 9% and 15% respectively, and the output power is -8 dBm and -5 dBm respectively. The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m.

Keywords

CMOS analogue integrated circuits; MMIC oscillators; circuit tuning; field effect MMIC; low-power electronics; millimetre wave oscillators; phase noise; silicon-on-insulator; voltage-controlled oscillators; 0.13 micron; 1.5 V; 100 micron; 11.25 mW; 2 V; 40 GHz; Si; chip area; fully-monolithic complementary VCO; output power; partially-depleted SOI CMOS technology; phase noise; tuning range; CMOS technology; Frequency; MOS devices; Parasitic capacitance; Phase noise; Power generation; Tuning; Varactors; Virtual colonoscopy; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7310-3

Type

conf

DOI

10.1109/VLSIC.2002.1015080

Filename

1015080