Title :
3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process
Author :
Komiak, J.J. ; Kong, W. ; Chao, P.C. ; Nichols, K.
Author_Institution :
Lockheed Martin Co., Nashua, NH, USA
Abstract :
The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; driver circuits; field effect MMIC; integrated circuit design; power HEMT; 0.15 micron; 0.5 W; 13 dB; 2.5 to 3 W; 30 percent; Ka-band MMIC HPA; PHEMT power amplifier; driver amplifier; fully selective power PHEMT process; fully selective recess process; Chaos; Driver circuits; Etching; Gain; Impedance; MMICs; PHEMTs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722619
