• DocumentCode
    1903187
  • Title

    Metamorphic In0.27Ga0.73As/In0.25Al0.75As HEMT on GaAs: MBE growth and device performance

  • Author

    Win, P. ; Cordier, Y. ; Druelle, Y. ; Bouillet, C. ; Favre, J ; Cappy, A.

  • Author_Institution
    Départment Hyperfréquences et Semiconducteurs, DHS-IEMN, UMR 9929, U.S.T.L., 59655 VILLENEUVE D´´ASCQ CEDEX, FRANCE.
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    A new HEMT using InAlAs/InGaAs grown on GaAs has been realized. This structure, with an In content close to 27%, presents high electron mobility with high 2DEG density (20700 cm2/V.s with 4×1012cm¿2 at 77K) and high Schottky barrier quality (Vb=0.68V with n=1.1). A 3 ¿m gate length device has shown intrinsic transconductance as high as 530 mS/mm.
  • Keywords
    Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Schottky barriers; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903187