DocumentCode :
1903187
Title :
Metamorphic In0.27Ga0.73As/In0.25Al0.75As HEMT on GaAs: MBE growth and device performance
Author :
Win, P. ; Cordier, Y. ; Druelle, Y. ; Bouillet, C. ; Favre, J ; Cappy, A.
Author_Institution :
Départment Hyperfréquences et Semiconducteurs, DHS-IEMN, UMR 9929, U.S.T.L., 59655 VILLENEUVE D´´ASCQ CEDEX, FRANCE.
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
317
Lastpage :
320
Abstract :
A new HEMT using InAlAs/InGaAs grown on GaAs has been realized. This structure, with an In content close to 27%, presents high electron mobility with high 2DEG density (20700 cm2/V.s with 4×1012cm¿2 at 77K) and high Schottky barrier quality (Vb=0.68V with n=1.1). A 3 ¿m gate length device has shown intrinsic transconductance as high as 530 mS/mm.
Keywords :
Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Schottky barriers; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435109
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1903187
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