Title :
Silicon oxide formation for TFTs using humid ozone-enriched gas ambient at low temperature
Author :
Hai, P.N. ; Nishio, S. ; Horita, S.
Author_Institution :
Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
Abstract :
Humid ozone-enriched ambient, created by bubbling (O3+O2) gas in H2O or H2O2, enhanced the silicon oxide growth on a Si substrate at 250°C. The film thickness was controllable with a high growth rate of 1.4 Å/min. The XPS data shows that the oxide layer on the Si(111) has the same transition layer structure as thermal SiO2 film. By combination with a short-time treatment at higher temperature (below 500°C), the electrical characteristics of SiO2 thin films were improved. The operation of polycrystalline Si thin film transistors using this oxide film indicates that the new growth method is applicable for low-temperature device fabrication.
Keywords :
X-ray photoelectron spectra; elemental semiconductors; oxidation; ozone; silicon; silicon compounds; thin film transistors; 250 degC; 500 degC; H2O; H2O2; O2; O3; Si(111) layer; Si-SiO2; TFT; XPS; film thickness control; humid ozone-enriched gas ambient; low temperature processing; oxide formation growth rate; oxide transition layer structure; polycrystalline thin film transistors; short-time higher temperature treatment; silicon oxide formation; Electric variables; Fabrication; Oxidation; Plasma devices; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356552
