Silicon oxide formation for TFTs using humid ozone-enriched gas ambient at low temperature

Author

Hai, P.N. ; Nishio, S. ; Horita, S.

Author_Institution

Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

313

Lastpage

316

Abstract

Humid ozone-enriched ambient, created by bubbling (O₃+O₂) gas in H₂O or H₂O₂, enhanced the silicon oxide growth on a Si substrate at 250°C. The film thickness was controllable with a high growth rate of 1.4 Å/min. The XPS data shows that the oxide layer on the Si(111) has the same transition layer structure as thermal SiO₂ film. By combination with a short-time treatment at higher temperature (below 500°C), the electrical characteristics of SiO₂ thin films were improved. The operation of polycrystalline Si thin film transistors using this oxide film indicates that the new growth method is applicable for low-temperature device fabrication.

Keywords

X-ray photoelectron spectra; elemental semiconductors; oxidation; ozone; silicon; silicon compounds; thin film transistors; 250 degC; 500 degC; H₂O; H₂O₂; O₂; O₃; Si(111) layer; Si-SiO₂; TFT; XPS; film thickness control; humid ozone-enriched gas ambient; low temperature processing; oxide formation growth rate; oxide transition layer structure; polycrystalline thin film transistors; short-time higher temperature treatment; silicon oxide formation; Electric variables; Fabrication; Oxidation; Plasma devices; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356552

Filename

1356552