• DocumentCode
    1903253
  • Title

    Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance

  • Author

    Ghannam, M.Y. ; Al Omar, A.S. ; Flamand, G. ; Posthuma, N. ; Poortmans, Jozef ; Mertens, R.P.

  • Author_Institution
    IMEC vzw, Leuven, Belgium
  • fYear
    2004
  • fDate
    21-23 Sept. 2004
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    Band-gap narrowing (BGN) is determined in heavily doped n-type GaAs and n-type Ga0.5In0.5P from experimental pn junction solar cell performance. A BGN of 82 meV and of 17 meV is determined in GaAs with an n-type doping concentration of 2×1018/cm3 and 1017/cm3, respectively, and an average 95 meV BGN is determined in Ga0.5In0.5P with an n-type doping concentration of 3×1018/cm3. These values agree well with theoretical predictions of a recent model applied to n-type GaAs and adapted here for Ga0.5In0.5P.
  • Keywords
    III-V semiconductors; doping profiles; energy gap; gallium compounds; indium compounds; photoconductivity; solar cells; BGN; GaAs; GaInP; band-gap narrowing; doping concentration; heavily doped n-type III-V semiconductors; photocurrent; pn junction solar cells; Circuits; Doping; Gallium arsenide; Photoconductivity; Photonic band gap; Photovoltaic cells; Predictive models; Radiative recombination; Surface fitting; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
  • Print_ISBN
    0-7803-8478-4
  • Type

    conf

  • DOI
    10.1109/ESSDER.2004.1356553
  • Filename
    1356553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903253