• DocumentCode
    1903273
  • Title

    Pseudomorphic Gax In1-x As on InP for HEMT Structures Grown by MBE

  • Author

    Künzel, H. ; Bach, H.-G. ; Böttcher, J. ; Dickmann, J. ; Dämbkes, H. ; Nachtwei, G. ; Heide, S.

  • Author_Institution
    Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, W-1000 Berlin 10, Germany
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    329
  • Lastpage
    332
  • Abstract
    Material characteristics of strained MBE GaInAs layers on InP have been investigated in dependence of the In-content. Pseudomorphic AlInAs/GaInAs HEMT structures are grown and characterized with systematically increasing the In-content of the channel layer. Preliminary results on 0.25 ¿m gate length devices are presented.
  • Keywords
    Aluminum alloys; Composite materials; Crystallization; Electric variables measurement; HEMTs; Indium phosphide; Lattices; Pattern matching; Temperature dependence; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903273