• DocumentCode
    1903342
  • Title

    Ultrashallow Emitter-Base Profiles by Double Diffusion

  • Author

    Biebl, M. ; Bianco, M. ; Ehinger, K. ; Philipsborn, H.v. ; Klose, H.

  • Author_Institution
    Siemens AG, Corporate Research, Otto-Hahn-Ring 6, 8000 Munich 83, FRG; Universitÿt Regensburg, NWF II, Physik, Universitÿtsstr. 31, 8400 Regensburg, FRG
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    347
  • Lastpage
    350
  • Abstract
    The diffusion of boron out of polysilicon was investigated. Diffusion and segregation coefficients were determined for furnace annealing and rapid thermal processing. Double polysilicon self-aligned npn bipolar transistors with sub 100 nm base widths were obtained, using the double diffusion technique. Calculations for the optimization of the base pinch resistance are presented. It is shown that base widths as low as 50 nm can be obtained with the double diffusion technique.
  • Keywords
    Bipolar transistors; Boron; Electrical resistance measurement; Furnaces; Ion implantation; Microelectronics; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903342