Title :
Ultrashallow Emitter-Base Profiles by Double Diffusion
Author :
Biebl, M. ; Bianco, M. ; Ehinger, K. ; Philipsborn, H.v. ; Klose, H.
Author_Institution :
Siemens AG, Corporate Research, Otto-Hahn-Ring 6, 8000 Munich 83, FRG; Universitÿt Regensburg, NWF II, Physik, Universitÿtsstr. 31, 8400 Regensburg, FRG
Abstract :
The diffusion of boron out of polysilicon was investigated. Diffusion and segregation coefficients were determined for furnace annealing and rapid thermal processing. Double polysilicon self-aligned npn bipolar transistors with sub 100 nm base widths were obtained, using the double diffusion technique. Calculations for the optimization of the base pinch resistance are presented. It is shown that base widths as low as 50 nm can be obtained with the double diffusion technique.
Keywords :
Bipolar transistors; Boron; Electrical resistance measurement; Furnaces; Ion implantation; Microelectronics; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
