Title :
Requirements on CD and overlay for 200 GHz QSA SiGe:C HBTs
Author :
Van Wichelen, K. ; Witters, L. ; Van Huylenbroeck, S. ; Leray, P. ; Laidler, D. ; Kunnen, E. ; Decoutere, S.
Author_Institution :
IMEC, Heverlee, Belgium
Abstract :
In this paper, we investigate the sensitivity of the quasi self-alignment (QSA) architecture to CD variation and alignment, resulting in a set of requirements on lithography capability imposed by the electrical performance of the device. We show that these requirements can be met without difficulty using present-day step and scan tools, so long as some precautions are taken in terms of alignment strategy. We show that the base current, current gain and BVEBO are the DC parameters of the HBT device most sensitive to misalignment.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; ultraviolet lithography; 200 GHz; CD variation; DUV lithography; QSA HBT; SiGe:C; alignment strategy; base current; current gain; misalignment sensitive parameters; overlay requirements; quasi self-alignment architecture; step and scan tools; Boron; CMOS technology; Capacitance; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Lithography; Silicon germanium; Surfaces;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356557
