Influence of self heating in a BiCMOS on SOI technology

Author

Haralson, Erik ; Malm, B. Gunnar ; Johansson, Ted ; Östling, Mikael

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

337

Lastpage

340

Abstract

Self heating in a 0.25 μm BiCMOS technology, with different isolation structures, is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.

Keywords

BiCMOS integrated circuits; integrated circuit metallisation; isolation technology; semiconductor device models; silicon-on-insulator; thermal resistance; 0.25 micron; 2D electro-thermal simulation; BiCMOS on SOI technology; DTI; STI; Si-SiO₂; emitter aspect ratio; isolation structures; metallization; multiple-emitter devices; self heating; single-emitter devices; thermal resistance; BiCMOS integrated circuits; Data mining; Dielectric measurements; Diffusion tensor imaging; Electrical resistance measurement; Heating; Isolation technology; Microelectronics; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356558

Filename

1356558