Universal integrated PIN photodetector

Author

Oberhauser, Klaus ; Nemecek, Alexander ; Sunder, Christoph ; Zimmermann, Horst

Author_Institution

Inst. for Electr. Measurements & Circuit Design, Vienna Univ. of Technol., Austria

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

349

Lastpage

352

Abstract

The universal PIN photodetector being realisable in CMOS and BiCMOS technology consists of a common cathode and finger anodes embedded in an intrinsic environment, for fast photogenerated-charge-carrier drift. This finger-anode structure, with rise times below 1 ns, and high responsivity in a wavelength range from 400 nm to 850 nm, permits applications: (i) as a two-anode correlation sensor for optical distance measurements and integrated 3D cameras; and (ii) as a photodiode for optical storage systems CD-ROMs as well as red and blue laser DVDs.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; integrated optoelectronics; laser ranging; optical disc storage; p-i-n photodiodes; photodetectors; video cameras; 1 ns; 400 to 850 nm; BiCMOS technology; CD-ROM; CMOS technology; blue laser DVD; common cathode; dual-anode correlation sensor; embedded finger anodes; fast photogenerated-charge-carrier drift; high responsivity structure; integrated 3D cameras; optical distance measurements; optical storage systems; photodiode; red laser DVD; universal integrated PIN photodetector; Anodes; BiCMOS integrated circuits; CMOS technology; Cathodes; Distance measurement; Fingers; Integrated optics; Optical sensors; Photodetectors; Sensor systems and applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356561

Filename

1356561