Title :
The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers
Author :
Vandamme, L.K.J. ; Casier, H.J.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Abstract :
We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge´s empirical relation. The 1/f noise is given by SR/R2=Cus/WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO2 based thick film resistors. This review shows that the results are similar and are well described by the relation: Cus=KRsh with K=αqμ (lowest value 5×10-13 μm2/Ω). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between Cus and sheet resistance Rsh.
Keywords :
1/f noise; Ge-Si alloys; boron; electric resistance; elemental semiconductors; gold; phosphorus; resistors; ruthenium compounds; semiconductor device measurement; semiconductor device noise; semiconductor materials; silicon; titanium compounds; 1/f noise; Au; Hooge empirical relation; RuO2; Si:B; Si:P; SiGe; TiSi; doped resistors; noise sheet resistance dependance; polycrystalline resistors; thick film resistors; Boron; Circuit noise; Crystallization; Electric resistance; Geometry; Resistors; Semiconductor device noise; Silicon; Strontium; Thick films;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356565
