• DocumentCode
    1903569
  • Title

    High frequency characteristics of MOSFETs with compact waffle layout

  • Author

    Wu, Wen ; Lam, Sang ; Ko, Ping K. ; Chan, Mansun

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
  • fYear
    2004
  • fDate
    21-23 Sept. 2004
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    The high frequency characteristics of waffle MOSFETs are studied. In addition to area saving, the waffle MOSFETs also provide enhancement of the RF characteristics. When compared with the conventional multi-finger layout with the same device width, the waffle MOSFETs provide extra flexibility in the design window. Measured S-parameters from a 0.35 μm technology process, over a wide range of bias conditions, indicate that the waffle MOSFET is capable of offering enhancements in fmax, fT, and minimum noise figure, with careful design.
  • Keywords
    MOSFET; S-parameters; microwave field effect transistors; 0.35 micron; 200 MHz to 30 GHz; MOSFET bias conditions; MOSFET high frequency characteristics; S-parameters; compact waffle layout; design window flexibility; minimum noise figure; waffle MOSFET; CMOS technology; Consumer electronics; Fingers; Gallium arsenide; MOSFETs; Noise measurement; Parasitic capacitance; Radio frequency; Transceivers; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
  • Print_ISBN
    0-7803-8478-4
  • Type

    conf

  • DOI
    10.1109/ESSDER.2004.1356569
  • Filename
    1356569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903569