Title :
Hot-Electron Induced Degradation in AlGaAs/GaAs HEMTs
Author :
Tedesco, C. ; Canali, C. ; Magistral, F. ; Paccagnella, A. ; Zanoni, E.
Author_Institution :
Dipartimento di Elettronica ed Informatica, Via Gradenigo 6a, 35131, Padova, ITALY
Abstract :
We present the first data on rapid degradation of electrical characteristics induced by hot electrons in AlGaAs/GaAs HEMTs. Degradation can be attributed to deep levels generated in the access region between gate and drain contacts possibly at the interfaces between GaAs cap layer and SiN passivation and/or the semiconductor layers in the gate-drain region.
Keywords :
Contacts; Degradation; Electric variables; Electrons; Gallium arsenide; HEMTs; Impact ionization; MODFETs; Passivation; Silicon compounds;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
