DocumentCode :
1903642
Title :
An Analytical Model for the Heterostructure-Emitter Bipolar Transistors
Author :
Wang, S.J. ; Yang, B.Y. ; Luo, Y.C.
Author_Institution :
Department of Electrical Engineering, National Cheng Kung University, Taiwan
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
107
Lastpage :
108
Keywords :
Analytical models; Bipolar transistors; Circuits; Electron emission; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Photonic band gap; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664579
Filename :
664579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1903642
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