Constant-charge-injection programming for 10-MB/s multilevel AG-AND flash memories

Author

Kurata, H. ; Saeki, S. ; Kobayashi, T. ; Sasago, Y. ; Kawahara, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2002

fDate

13-15 June 2002

Firstpage

302

Lastpage

303

Abstract

The demand for high-density, high-speed programming in flash memories has been increasing because their expanding applications in portable equipment such as digital still cameras and music players. A multilevel technique is one of the most effective approaches for improving memory density. But long cell programming time and precise control of the memory cell´s threshold voltage (Vth) degrade its programming performance. To realize fast cell programming, we have developed a so-called assist-gate (AG)-AND-type flash cell, in which programming is performed by source side channel hot electron injection (SSI). In this paper, we developed a constant-charge-injection programming, which realizes fast precise control of Vth by suppressing the characteristic deviation. By utilizing proposed scheme, we achieved. 10.3-MB/s programming throughput in multilevel AG-AND flash memories.

Keywords

PLD programming; cellular arrays; flash memories; high-speed integrated circuits; hot carriers; multivalued logic; 10.3 MB/s; assist-gate flash cell; cell programming time; constant-charge-injection programming; high-speed programming; memory density; multilevel AG-AND flash memories; portable equipment; source side channel hot electron injection; threshold voltage; Capacitors; Committee on Communications and Information Policy; Degradation; Electrons; Intrusion detection; MOSFETs; Nonvolatile memory; Parallel programming; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7310-3

Type

conf

DOI

10.1109/VLSIC.2002.1015110

Filename

1015110