TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping]

Author

Vet, Laurent ; Robilliart, Etienne ; Lenoble, Damien ; Grouillet, André ; Lallement, Fabrice ; Dray, Alexandre ; Salvetti, Frédéric ; Villanueva, Davy ; Balossier, Eric ; Jaouen, Hervé ; Walther, S. ; Jeong, U. ; Mehta, S.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

405

Lastpage

408

Abstract

Plasma doping (PLAD) is an ion implantation technique under investigation to realize ultra-shallow junctions for 65 nm nodes and beyond. This technique has been modelled and is integrated in TCAD process simulation tools. The most influential parameters of PLAD have been isolated. With these parameters, a design of experiments (DOE) has been performed to interpolate a quadratic surface response model of PLAD profiles. Boron implantations were studied in the range from 1 to 8 keV and 1e15 to 5e15at/cm². Accuracy is very good on the whole range of parameter variations. 2D process simulations are finally shown.

Keywords

CMOS integrated circuits; design of experiments; interpolation; plasma immersion ion implantation; semiconductor process modelling; technology CAD (electronics); 1 to 8 keV; 2D process simulation tools; 65 nm; B; CMOS; DOE; PLAD implantation TCAD modelling; design of experiments; ion implantation; plasma doping; quadratic surface response model interpolation; ultra-shallow junctions; Boron; Doping; Ion implantation; Isolation technology; Plasma applications; Plasma immersion ion implantation; Plasma simulation; Response surface methodology; Semiconductor process modeling; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356575

Filename

1356575