Investigation of charge transport in organic single crystals using a "flip-crystal" field-effect technique

Author

Goldmann, C. ; Krellner, C. ; Pernstich, K.P. ; Haas, S. ; Gundlach, D.J. ; Batlogg, B.

Author_Institution

Lab. for Solid State Phys., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

409

Lastpage

412

Abstract

We report on progress in organic single crystal field-effect devices fabricated by a "flip-crystal" technique. High reproducibility of the device quality results from an improved chemical treatment process of the substrate. Hole mobilities of 10.7 cm²/Vs for rubrene, 1.3 cm²/Vs for tetracene and 1.4 cm²/Vs for pentacene single crystals have been measured even with limited purification of the starting materials. Four-terminal measurements facilitate the separation of intrinsic channel properties and contact effects.

Keywords

contact resistance; field effect transistors; hole mobility; organic semiconductors; charge transport; contact effects; flip-crystal field-effect technique; four-terminal measurements; hole mobility; intrinsic channel properties; organic semiconductors; organic single crystal field-effect devices; pentacene; rubrene; single crystal FET; starting materials purification; substrate chemical treatment process; tetracene; Chemical processes; Crystals; Electrodes; Extraterrestrial measurements; FETs; Fabrication; Optical materials; Organic thin film transistors; Pentacene; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356576

Filename

1356576