DocumentCode
1903780
Title
The influence of MBE-layer design on the high frequency performance of Si/SiGe HBTs
Author
Gruhle, A. ; Kibbel, H. ; Kasper, E.
Author_Institution
Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
435
Lastpage
438
Abstract
The high frequency performances of MBE-grown Si/SiGe HBTs with different layer designs have been compared. The base transit time is of particular importance. It is very sensitive to the distribution and possible outdiffusion of the base doping. The influence of i-layers and Ge grading has been investigated. The best devices reached a transit frequency of 52 GHz, the highest value reported for SiGe HBTs with high base doping.
Keywords
Design engineering; Doping; Dry etching; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Metallization; Microelectronics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435133
Link To Document