Reliability and Qualification of a Floating Gate Memory Manufactured in a Generic Logic Process for RFID Applications

Author

Ma, Yanjun ; Pesavento, Alberto ; Nguyen, Hoc ; Li, Haibo ; Paulsen, Ron

Author_Institution

Impinj, Inc., Seattle, WA

fYear

2006

fDate

12-16 Feb. 2006

Firstpage

44

Lastpage

45

Abstract

In this paper, we discuss the reliability evaluation and qualification results of a small (~ 256b) pFET based floating gate nonvolatile memory for embedded application in a UHF RFID chip that is being volume produced using a foundry logic CMOS process. The memory is based on bi-directional Fowler-Nordheim tunneling using a ~65-70 Aring oxide that is available from typical foundry processes with 3.3V I/O transistors. Well over one year of retention bake data are reported to show that the memory is reliable for the required applications

Keywords

CMOS memory circuits; integrated circuit reliability; radiofrequency identification; tunnelling; 3.3 V; UHF RFID chip; bidirectional Fowler-Nordheim tunneling; floating gate memory; foundry logic CMOS process; generic logic process; pFET based floating gate nonvolatile memory; retention bake data; CMOS process; Foundries; Logic; Manufacturing processes; Nonvolatile memory; Qualifications; RFID tags; Radiofrequency identification; Supply chains; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0027-9

Type

conf

DOI

10.1109/.2006.1629486

Filename

1629486