Title :
Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor
Author :
Tsai, Jung-Hui ; Zhu, King-Poul ; Chu, Ying-Cheng ; Chiu, Shao-Yen
Author_Institution :
Dept. of Phys., Nat. Kaohsiung Normal Univ., Taiwan
Abstract :
An InP/InGaAs δ-doped pnp heterojunction bipolar transistor (HBT) has been successfully fabricated and demonstrated for the first time. The addition of a δ-doped sheet between two undoped spacer layers more effectively eliminates the potential spike at the emitter-base junction, lowers the emitter-collector offset voltage, and increases the effective barrier for electrons, simultaneously. A maximum current gain of 50 and a low offset voltage of 70 mV are obtained, respectively. To our knowledge, the offset voltage of the studied device is the best reported for InP/InGaAs pnp HBTs.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; δ-doped HBT; 70 mV; InP-InGaAs; doped sheet; electron effective barrier; emitter-base junction potential spike elimination; emitter-collector offset voltage reduction; low offset voltage; pnp heterojunction bipolar transistor; undoped spacer layers; Chemical vapor deposition; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Performance gain; Photonic integrated circuits; Physics;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356584
