Influence of electric field of surface acoustic wave on the low temperature photoluminescence of type II GaAs/AlAs superlattice

Author

Philimonova, N.I.

Author_Institution

Novosibirsk State Tech. Univ., Russia

Volume

3

fYear

2003

fDate

6-6 July 2003

Firstpage

28

Abstract

GaAs/AlAs - superlattice is one of most extensively investigated quantum-dimensional structures objects, the interest to which is caused by its capability to change optical and transport properties, varying the layer thickness. In low dimensional semiconductor structures the field of a surface acoustic wave can be used to control lifetime and transport properties of the photogenerated carriers. The surface acoustic wave (SAW) electric field influence on radiative recombination in type II GaAs/AlAs superlattices hasn´t been studied. In this paper the effect of surface acoustic wave (SAW) electric field on a steady-state photoluminescence (PL) of X/sub z/ excitons in GaAs/AlAs type II superlattices was investigated and discussed. It is shown, that the intensity of PL decreased with growth SAW power. These effects are attributed to the ionization of the excitons by SAW electric field.

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; electric field effects; electron-hole recombination; excitons; gallium arsenide; ionisation; photoluminescence; semiconductor superlattices; surface acoustic waves; GaAs-AlAs; PL; X/sub z/ excitons; electric field; excitons ionization; lifetime; low dimensional semiconductor structures; low temperature photoluminescence; photogenerated carriers; quantum-dimensional structures objects; radiative recombination; steady-state photoluminescence; surface acoustic wave; transport properties; type II GaAs/AlAs superlattice;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2003. Proceedings KORUS 2003. The 7th Korea-Russia International Symposium on

Conference_Location

Ulsan, South Korea

Print_ISBN

89-7868-617-6

Type

conf

Filename

1222830