Title :
Scalable Floating Gate Flash Memory CellWith Engineered Tunnel Dielectric and High-K (Al2O3) Interpoly Dielectric
Author :
Blomme, Pieter ; De Vos, Joeri ; Akheyat, A. ; Haspeslagh, Luc ; Houdt, J.V. ; De Meye, K.
Abstract :
In this work, we demonstrate for the first time the operation of memory cells with a bidirectional engineered tunneling barrier: a triple layer Variot stack. Furthermore, these memory cells also have an Al2O3 interpoly dielectric and achieve 10 years of data retention up to 120degC
Keywords :
aluminium compounds; dielectric materials; flash memories; high-k dielectric thin films; Al2O3; bidirectional engineered tunneling barrier; data retention; high-K interpoly dielectrics; memory cells; scalable floating gate flash memory cell; triple layer Variot stack; tunnel dielectrics; Aluminum oxide; Contacts; Dielectric substrates; Electron traps; Flash memory; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Threshold voltage; Tunneling;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629490
