• DocumentCode
    1903959
  • Title

    Scalable Floating Gate Flash Memory CellWith Engineered Tunnel Dielectric and High-K (Al2O3) Interpoly Dielectric

  • Author

    Blomme, Pieter ; De Vos, Joeri ; Akheyat, A. ; Haspeslagh, Luc ; Houdt, J.V. ; De Meye, K.

  • fYear
    2006
  • fDate
    12-16 Feb. 2006
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    In this work, we demonstrate for the first time the operation of memory cells with a bidirectional engineered tunneling barrier: a triple layer Variot stack. Furthermore, these memory cells also have an Al2O3 interpoly dielectric and achieve 10 years of data retention up to 120degC
  • Keywords
    aluminium compounds; dielectric materials; flash memories; high-k dielectric thin films; Al2O3; bidirectional engineered tunneling barrier; data retention; high-K interpoly dielectrics; memory cells; scalable floating gate flash memory cell; triple layer Variot stack; tunnel dielectrics; Aluminum oxide; Contacts; Dielectric substrates; Electron traps; Flash memory; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629490
  • Filename
    1629490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903959