Hot carrier-induced degradation mechanisms in short-channel SIMOX p-MOSFET´s

Systematic aging experiments have been performed on Silicon-On-Insulator p-MOSFET´s synthesized by oxygen implantation (SIMOX). It is shown that the major degradation mechanism consists in electron injection in the buried oxide (BOX), even under normal operation conditions. The electron trapping into the BOX proceeds logarithmically in time. An analytical model is proposed to assess the trapping kinetics. Suggestions are made to reduce the impact of the trapped charge into the BOX.