DocumentCode :
1904016
Title :
Analysis and application of energy capability characterization methods in power MOSFETs
Author :
Van den Bosch, G. ; Moens, P. ; Gassot, P. ; Wojciechowski, D. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2004
fDate :
21-23 Sept. 2004
Firstpage :
453
Lastpage :
456
Abstract :
A theoretical and experimental comparison is made between different energy capability (EC) characterization methods in power MOSFETs. In traditional clamped inductive switching (CIS) the measurement conditions are difficult to control independently. Moreover, theoretical analysis suggests that the CIS results are not unique but depend on measurement circuit parameters. An alternative method uses rectangular power pulses. Various implementations have been considered and the resulting energy capability data have been shown to match well with one another and with the CIS data. The influence on EC of a thick Cu layer covering the power transistor is demonstrated.
Keywords :
copper; failure analysis; power MOSFET; power measurement; semiconductor device measurement; semiconductor device reliability; C; CIS; clamped inductive switching; energy capability characterization methods; power MOSFET; power transistor thick Cu covering layer; rectangular power pulses; thermal failure models; Circuits; Computational Intelligence Society; MOSFETs; Power measurement; Pulse measurements; Pulse shaping methods; Semiconductor optical amplifiers; Shape; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
Type :
conf
DOI :
10.1109/ESSDER.2004.1356589
Filename :
1356589
Link To Document :
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