Analysis and application of energy capability characterization methods in power MOSFETs

A theoretical and experimental comparison is made between different energy capability (EC) characterization methods in power MOSFETs. In traditional clamped inductive switching (CIS) the measurement conditions are difficult to control independently. Moreover, theoretical analysis suggests that the CIS results are not unique but depend on measurement circuit parameters. An alternative method uses rectangular power pulses. Various implementations have been considered and the resulting energy capability data have been shown to match well with one another and with the CIS data. The influence on EC of a thick Cu layer covering the power transistor is demonstrated.