DocumentCode
1904064
Title
90nm Split-Gate Nanocrystal Non-Volatile Memory with Reduced Threshold Voltage
Author
Yater, Jane A. ; Kirichenko, T. ; Prinz, E.J. ; Sadd, M. ; Steimle, R. ; Swift, C.T. ; Chang, K.-M.
fYear
2006
fDate
2006
Firstpage
60
Lastpage
61
Keywords
Dielectric substrates; Doping; Etching; Human computer interaction; Nanocrystals; Nonvolatile memory; Secondary generated hot electron injection; Split gate flash memory cells; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location
Monterey, CA, USA
Print_ISBN
1-4244-0027-9
Type
conf
DOI
10.1109/.2006.1629494
Filename
1629494
Link To Document