DocumentCode :
1904064
Title :
90nm Split-Gate Nanocrystal Non-Volatile Memory with Reduced Threshold Voltage
Author :
Yater, Jane A. ; Kirichenko, T. ; Prinz, E.J. ; Sadd, M. ; Steimle, R. ; Swift, C.T. ; Chang, K.-M.
fYear :
2006
fDate :
2006
Firstpage :
60
Lastpage :
61
Keywords :
Dielectric substrates; Doping; Etching; Human computer interaction; Nanocrystals; Nonvolatile memory; Secondary generated hot electron injection; Split gate flash memory cells; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629494
Filename :
1629494
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1904064
