Title :
A 90nm Embedded 2-Bit Per Cell Nanocrystal Flash EEPROM
Author :
Prinz, Erwin J. ; Yater, Jane ; Steimle, Robert ; Sadd, Michael ; Swift, Craig ; Chang, Ko-Min
Author_Institution :
Technol. Solutions Organ., Freescale Semicond. Inc., Austin, TX
Abstract :
A two bit/cell embedded nanocrystal bitcell with low write current SSI program and tunnel erase in which nanocrystals are located under dedicated control gates has been demonstrated. Write bias conditions which mitigate gate disturb in a top erase capable bitcell have been confirmed
Keywords :
embedded systems; flash memories; nanoelectronics; nanostructured materials; 2 bit; 2-bit per cell nanocrystal flash EEPROM; 90 nm; control gates; embedded nanocrystal bitcell; embedded nanocrystal flash memory; low write current SSI program; top erase capable bitcell; tunnel erase; write bias conditions; EPROM; Electrons; Implants; Nanocrystals; Nonvolatile memory; SONOS devices; Thickness control; Threshold voltage; Throughput; Voltage control;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629495
