Process Analysis using RSM and Simulation

In this paper a statistical analysis of an advanced CMOS process performed using the Response Surface Method (RSM) applied to process/device simulation is presented. The statistical distribution of the most important electrical parameters (threshold voltages, saturation currents, ...) of the active devices have been predicted starting from the distributions of the input parameters (implant doses, furnace temperatures, ..). The simulated results are compared with data collected in a fabrication line and discussed.