Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

Author

Sunamura, Hiroshi ; Masuzaki, Koji ; Terai, Masayuki ; Kotsuji, Setsu ; Onizawa, Takashi ; Morioka, Ayuka ; Ikarashi, Taeko ; Ikarashi, Nobuyuki ; Fujieda, Shinji ; Watanabe, Hirohito

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Sagamihara

fYear

2006

fDate

12-16 Feb. 2006

Firstpage

70

Lastpage

71

Abstract

We have proposed a new method to prepare thin nitrogen-based charge trap layer for scaled-down SONOS with thin EOT (<12nm). Devices employing an ONO prepared by the newly proposed method, a N₂-plasma treated base oxide topped by an HTO, showed unprecedented V_th uniformity, carrier localization and good retention characteristics. An overall comparison with Si₃N ₄-SONOS is given. They also offer excellent transistor characteristics (high on-current and low V_th), making them ideal for future scaled low-voltage embedded applications with fast readout

Keywords

electron traps; nitridation; nitrogen; plasma materials processing; semiconductor storage; semiconductor thin films; silicon compounds; N; SONOS-type nonvolatile memory; Si₃N₄; carrier localization; charge trap layer; plasma nitridation; retention characteristics; scaled-down SONOS; threshold voltage uniformity; transistor characteristics; ultra-uniform threshold voltage; Channel hot electron injection; Laboratories; Logic circuits; National electric code; Nonvolatile memory; Plasma devices; Plasma measurements; SONOS devices; Surface morphology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0027-9

Type

conf

DOI

10.1109/.2006.1629499

Filename

1629499