Title :
Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation
Author :
Sunamura, Hiroshi ; Masuzaki, Koji ; Terai, Masayuki ; Kotsuji, Setsu ; Onizawa, Takashi ; Morioka, Ayuka ; Ikarashi, Taeko ; Ikarashi, Nobuyuki ; Fujieda, Shinji ; Watanabe, Hirohito
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Sagamihara
Abstract :
We have proposed a new method to prepare thin nitrogen-based charge trap layer for scaled-down SONOS with thin EOT (<12nm). Devices employing an ONO prepared by the newly proposed method, a N2-plasma treated base oxide topped by an HTO, showed unprecedented Vth uniformity, carrier localization and good retention characteristics. An overall comparison with Si3N 4-SONOS is given. They also offer excellent transistor characteristics (high on-current and low Vth), making them ideal for future scaled low-voltage embedded applications with fast readout
Keywords :
electron traps; nitridation; nitrogen; plasma materials processing; semiconductor storage; semiconductor thin films; silicon compounds; N; SONOS-type nonvolatile memory; Si3N4; carrier localization; charge trap layer; plasma nitridation; retention characteristics; scaled-down SONOS; threshold voltage uniformity; transistor characteristics; ultra-uniform threshold voltage; Channel hot electron injection; Laboratories; Logic circuits; National electric code; Nonvolatile memory; Plasma devices; Plasma measurements; SONOS devices; Surface morphology; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629499
