Title :
A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
Author :
Lang, M. ; Wang, Z.G. ; Thiede, A. ; Lienhart, H. ; Jakobus, T. ; Bronner, W. ; Hornung, J. ; Hulsmann, A.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and converts it into a four bit parallel data signal. The results presented here have been measured on wafer.
Keywords :
HEMT integrated circuits; III-V semiconductors; data communication equipment; decision circuits; demultiplexing equipment; digital communication; gallium arsenide; mixed analogue-digital integrated circuits; optical receivers; synchronisation; 0.2 micron; 40 Gbit/s; AlGaAs-GaAs-AlGaAs; GaAs HEMT IC; clock recovery; data decision; demultiplexer circuit; quantum well HEMT technology; single chip data receiver; Circuits; Clocks; Data communication; Frequency; Gallium arsenide; HEMTs; Optical amplifiers; Optical receivers; Parallel processing; Semiconductor device measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722624
