DocumentCode :
1904233
Title :
Extending endurance of NROM memories to over 10 million program/erase cycles
Author :
Roizin, Yakov ; Pikhay, Evgeny ; Lisiansky, Michael ; Heiman, Alexey ; Alon, Eli ; Aloni, Efraim ; Fenigstein, Amos
fYear :
2006
fDate :
2006
Firstpage :
74
Lastpage :
75
Keywords :
Charge carrier processes; Degradation; Electrodes; Electron traps; High K dielectric materials; Poles and towers; SONOS devices; Substrates; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629501
Filename :
1629501
Link To Document :
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