Title :
Highly scalable NAND-type PHINES flash memory for data flash applications
Author :
Yeh, C.C. ; Liao, Y.Y. ; Tsai, W.J. ; Lu, T.C. ; Ou, T.F. ; Kao, H.L. ; Wang, Tahui ; Ting, WenChi ; Ku, Joseph ; Chih-Yuan Lu
Author_Institution :
Technol. Dev. Center, Macronix Int. Co. Ltd., Hsin-Chu
Abstract :
In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology
Keywords :
NAND circuits; flash memories; low-power electronics; NAND type PHINES flash memory; data flash applications; high programming throughput; high storage density; low power operation; mass storage; nitride trapping storage; Consumer electronics; Degradation; Electric breakdown; Electronics industry; Electrons; Flash memory; Industrial electronics; Nonvolatile memory; SONOS devices; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629502
