Modeling of a cumulative distribution function oscillatory-active molecules in plasma O/sub 2/

The component O/sub 2/ in a freon at plasma etching Si results in essential increase of speed of etching. However gear of this effect is not completely comprehension. In the present article the calculation of distribution oscillatory-active molecules O/sub 2/ on oscillatory levels is carried out. Energy of excitation of particles is in a broad band: from rotary excitations, at which one is swallowed from 0.01 - 0.1 eV, before ionization, at which one is swallowed more than 10 eV. In a low-temperature plasma of low pressure (it is less 100 Pa) the oscillatory levels of the basic electronic condition are to the greatest degree populated and just they can essentially influence both chemical reactions, and on formation of a cumulative distribution function of electrons on energy. In the present article for calculation the expression for speed of change of density at V oscillatory level for plasma of oxygen, in which one will be used, besides molecules at a ground state there are also atoms O(/sup 3/P), sharing during V-T of a relaxation. The calculations are conducted by the numerical method. Data-ins are the kinetic characteristics, density and temperature of gas. The obtained cumulative distribution function oscillatory-active molecules coincides experimental data.