Title :
High Performance Cu Containing Ru or RuNx for Barrierless Metallization
Author :
Chu, Jinn P. ; Lin, C.H.
Author_Institution :
Inst. of Materials Sci. & Tech., National Taiwan University of Science and Technology, Taipei 10607, Taiwan, Phone: +886-2-27303292, Fax: +886-2-27376544, E-mail: jpchu@mail.ntust.edu.tw
Abstract :
This article reports novel copper seed layers containing dilute Ru or RuNx for the barrierless metallization. Based on XRD, FIB, TEM, resistivity and leakage current measurement results, we conclude that copper does not react with Si up to 680°C for 1 hour when the Ru-or RuNx-bearing seed layer is directly in contact with the barrier-free Si. Our results shed lights on the possibility of using these layers in the barrierless metallization process.
Keywords :
Annealing; Conductivity; Copper; Inorganic materials; Materials science and technology; Metallization; Stress; Temperature; Thermal stability; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546914
