• DocumentCode
    1904278
  • Title

    High Performance Cu Containing Ru or RuNx for Barrierless Metallization

  • Author

    Chu, Jinn P. ; Lin, C.H.

  • Author_Institution
    Inst. of Materials Sci. & Tech., National Taiwan University of Science and Technology, Taipei 10607, Taiwan, Phone: +886-2-27303292, Fax: +886-2-27376544, E-mail: jpchu@mail.ntust.edu.tw
  • fYear
    2008
  • fDate
    1-4 June 2008
  • Firstpage
    25
  • Lastpage
    27
  • Abstract
    This article reports novel copper seed layers containing dilute Ru or RuNx for the barrierless metallization. Based on XRD, FIB, TEM, resistivity and leakage current measurement results, we conclude that copper does not react with Si up to 680°C for 1 hour when the Ru-or RuNx-bearing seed layer is directly in contact with the barrier-free Si. Our results shed lights on the possibility of using these layers in the barrierless metallization process.
  • Keywords
    Annealing; Conductivity; Copper; Inorganic materials; Materials science and technology; Metallization; Stress; Temperature; Thermal stability; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2008. IITC 2008. International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    978-1-4244-1911-1
  • Electronic_ISBN
    978-1-4244-1912-8
  • Type

    conf

  • DOI
    10.1109/IITC.2008.4546914
  • Filename
    4546914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904278