Title :
Quantitative Model for Data Retention Loss at NROM Nitride Charge Trapping Devices after Program / Erase Cycling
Author :
Tempel, G. ; Hagenbeck, R. ; Strassburg, M.
Keywords :
Acceleration; Channel hot electron injection; Degradation; Electron traps; Flash memory; Hot carriers; Nonvolatile memory; SONOS devices; Stress; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629503
