• DocumentCode
    1904285
  • Title

    Quantitative Model for Data Retention Loss at NROM Nitride Charge Trapping Devices after Program / Erase Cycling

  • Author

    Tempel, G. ; Hagenbeck, R. ; Strassburg, M.

  • fYear
    2006
  • fDate
    2006
  • Firstpage
    78
  • Lastpage
    80
  • Keywords
    Acceleration; Channel hot electron injection; Degradation; Electron traps; Flash memory; Hot carriers; Nonvolatile memory; SONOS devices; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629503
  • Filename
    1629503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904285