Development and optimization of porous pSiCOH interconnect dielectrics for 45 nm and beyond

Author

Grill, A. ; Gates, S. ; Dimitrakopoulos, C. ; Patel, V. ; Cohen, S. ; Ostrovski, Y. ; Liniger, E. ; Simonyi, E. ; Restaino, D. ; Sankaran, S. ; Reiter, S. ; Demos, A. ; Yim, K.S. ; Nguyen, V. ; Rocha, J. ; Ho, D.

Author_Institution

IBM - T.J.Watson Research Center, Yorktown Heights, NY 10598

fYear

2008

fDate

1-4 June 2008

Firstpage

28

Lastpage

30

Abstract

A porous pSiCOH interconnect dielectric with a dielectric constant k=2.4 has been developed from mixtures of a SiCOH skeleton precursor and bicycloheptadiene (BCHD) and optimized for successful integration in the interconnect structure of 45 nm ULSI chip. The ulk pSiCOH is characterized by small pores, low pore connectivity, and excellent electrical properties. This paper describes the selection of the precursors, the optimization process and the properties of the optimized pSiCOH. The film has been qualified for integration in three 2X dual damascene metallization levels of 45 nm interconnects.

Keywords

Annealing; Curing; Dielectric devices; Electric variables measurement; Manufacturing processes; Mechanical factors; Optical films; Plasma measurements; Skeleton; Thickness measurement; bicycloheptadiene; dielectric; diethoxymethylsilane; pSiCOH; ultralow-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2008. IITC 2008. International

Conference_Location

Burlingame, CA, USA

Print_ISBN

978-1-4244-1911-1

Electronic_ISBN

978-1-4244-1912-8

Type

conf

DOI

10.1109/IITC.2008.4546915

Filename

4546915