DocumentCode :
1904338
Title :
A Self-Aligned Air Gap Interconnect Process
Author :
Chen, Hsien-Wei ; Jeng, Shin-Puu ; Tsai, Hao-Yi ; Liu, Yu-Wen ; Yu, CH ; Sun, YC
Author_Institution :
Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC), Hsinchu, Taiwan, R.O.C.
fYear :
2008
fDate :
1-4 June 2008
Firstpage :
34
Lastpage :
36
Abstract :
A self-aligned air gap interconnect structure with sidewall reinforcement is developed. The new structure lowers the capacitance of 0.09um/0.09um (w/s) metal wires by as much as 25%, and exhibits low leakage current. As compared to un-protected air gaps, the structure also greatly improves the electromigration resistance and the misalignment margin for unlanded vias. Furthermore, the sidewall protection layer strengthens the overall mechanical strength and increases the packaging reliability.
Keywords :
Air gaps; Capacitance; Dielectrics; Dry etching; Leakage current; Manufacturing processes; Protection; Resists; Semiconductor device packaging; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
Type :
conf
DOI :
10.1109/IITC.2008.4546917
Filename :
4546917
Link To Document :
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