DocumentCode :
1904346
Title :
Resistance switching of Al doped ZnO for Non Volatile Memory applications
Author :
Lee, Dongsoo ; Hwang, Dae-Kue ; Chang, Man ; Son, Yunik ; Seong, Dong-jun ; Choi, Dooho ; Hwang, Hyunsang
fYear :
2006
fDate :
2006
Firstpage :
86
Lastpage :
87
Keywords :
Electric resistance; Ferroelectric materials; Materials science and technology; Nonvolatile memory; Pulsed laser deposition; Semiconductor films; Semiconductor materials; Silicon; Voltage; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629506
Filename :
1629506
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1904346
