Title :
Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3 Schottky Junction
Author :
Sim, Hyunjun ; Seong, Dong-jun ; Chang, Man ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.
Abstract :
The hysteretic resistance switching characteristics of Pt/Nb-doped STO Schottky junctions were investigated for nonvolatile memory applications. The Pt/single crystal Nb:STO Schottky junction exhibits excellent resistance switching characteristics such as stable pulse switching, uniform set/rest state and die-to-die uniformity. The switching mechanism might be explained by modulation of the Schottky tunnel barrier width by charging and discharging of electron in oxygen vacancy
Keywords :
Schottky barriers; niobium; platinum; semiconductor junctions; semiconductor storage; strontium compounds; titanium compounds; Pt-SrTiO3:Nb; Schottky tunnel barrier width; die-to-die uniformity; hysteretic resistance switching; nonvolatile memory applications; oxygen vacancy; resistance switching characteristics; single crystal Schottky junctions; stable pulse switching; Annealing; Electrons; Hydrogen; Hysteresis; Materials science and technology; Niobium; Nonvolatile memory; Surface resistance; Surface treatment; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629507
