DocumentCode :
1904380
Title :
Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode
Author :
Kang, Dae-Hwan ; Kim, In Ho ; Jeong, Jeung-hyun ; Cheong, Byung-ki ; Ahn, Dong-Ho ; Kim, Ki-Bum
fYear :
2006
fDate :
2006
Firstpage :
90
Lastpage :
91
Keywords :
Contact resistance; Electrodes; Fluctuations; Materials science and technology; Nonvolatile memory; Oxidation; Phase change memory; Tellurium; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629508
Filename :
1629508
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1904380
