DocumentCode
1904424
Title
Generalized Phase Change Memory Scaling Rule Analysis
Author
Kim, SangBum ; Wong, H. -S Philip
Author_Institution
Center for Integrated Syst. & Dept. of Electr. Eng., Stanford Univ., CA
fYear
2006
fDate
12-16 Feb. 2006
Firstpage
92
Lastpage
94
Abstract
In this paper, we present a generalized scaling analysis for phase change memory in analytical forms which are verified by 3D finite-element electrothermal modeling. Our analytical solutions provide insights into the key device parameters that control the maximum temperature of the phase change memory cell and the minimum required programming voltage
Keywords
finite element analysis; integrated circuit modelling; phase change materials; semiconductor storage; 3D finite-element electrothermal modeling; generalized scaling analysis; phase change memory cell; programming voltage; scaling rule; temperature control; Electric resistance; Electrothermal effects; Energy conservation; Phase change materials; Phase change memory; Resistance heating; Temperature; Thermal conductivity; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0027-9
Type
conf
DOI
10.1109/.2006.1629509
Filename
1629509
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