Title :
Copper direct bonding for 3D integration
Author :
Gueguen, Pierric ; Di Cioccio, Lea ; Rivoire, Maurice ; Scevola, Daniel ; Zussy, Marc ; Charvet, Anne Marie ; Bally, Laurent ; Lafond, Dominique ; Clavelier, Laurent
Author_Institution :
CEA Léti - MINATEC, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France, e-mail: pierric.gueguen@cea.fr
Abstract :
In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bonding and the possibility to grind the top silicon down to 10 ¿m have been demonstrated.
Keywords :
Bonding; Copper; Decision support systems; Quadratic programming;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546926
