Diamond fast opening switches for inductive energy storage power modulators

Summary form only given. Presents experimental results from natural and CVD diamonds used as fast opening switches in prototype IES circuits. The physical and electrical properties of diamond combine to offer a superb electronic material. Diamond has the highest electrical breakdown strength, highest thermal conductivity, highest operating temperature, and best mechanical strength of any solid state switch material (e.g. Si or GaAs). Diamond switches are capable of /spl sim/0.1 kHz operation at /spl sim/0.1-1 MV amplified voltages. Early results with natural Type IIa diamonds indicate /spl sim/0.2-0.5 /spl mu/s conduction times followed by rapid opening with dR/dt values /spl sim/5/spl times/10/sup 10/ /spl Omega//s. Results of experiments at charge voltages up to 10 kV and conduction times up to -1 /spl mu/s will be presented. The power amplification and efficiency of these opening switches will be evaluated in light of several applications such as a 150 kA/150 kV/40 ns compact flash X-ray source, high average power microwave sources, and particle-beam drivers.