DocumentCode
1904666
Title
On the Elements of High Throughput Cu-CMP Slurries Compatible with Low Step Heights
Author
Kanki, T. ; Shirasu, T. ; Takesako, S. ; Sakamoto, M. ; Asneil, Akbar Ade ; Idani, N. ; Kimura, T. ; Nakamura, T. ; Miyajima, M.
Author_Institution
Fujitsu Laboratories Limited, 50 Fuchigami, Akiruno, Tokyo, 197-0833, Japan, Phone: +81-42-532-1249, Fax: +81-42-532-2513, e-mail katsuyoshi@jp.fujitsu.com
fYear
2008
fDate
1-4 June 2008
Firstpage
79
Lastpage
81
Abstract
In order to achieve high throughput Cu-CMP compatible with low step heights in 32nm Node copper interconnect technologies and beyond, we believe it is crucial a passivation layer on the Cu surface in the slurry during the CMP process. We show that the formation of a passivation layer which achieves good planarization with high Cu removal rate can be controlled by selecting the rest potential of the Cu ions in the slurry.
Keywords
Chemical elements; Copper; Integrated circuit interconnections; Laboratories; Passivation; Planarization; Slurries; Throughput; Ultra large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546931
Filename
4546931
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