Title :
Hybrid e-CMP/CMP Process with Non-Contact Electrode Pad
Author :
Kondo, S. ; Abe, D. ; Enomoto, T. ; Tominaga, S. ; Yamada, K. ; Saito, S.
Author_Institution :
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan, Phone: +81-298-49-1285, Fax: +81-298-49-1452, E-mail: kondo.seiichi@selete.co.jp
Abstract :
We developed a damage-less electro-chemical mechanical planarization (e-CMP) method that does not use any contact electrodes with Cu wafers, but has anode-cells to maintain electric current for electrolysis reaction of H2O. A high removal rate of 1.4 um/min was obtained with an electro-polishing efficiency of 85%. Based on this technology, we propose a hybrid e-CMP/CMP process which combines a high speed e-CMP for removing bulk Cu film and a low-pressure CMP for clearing residual Cu and barrier metal films by using a newly developed hybrid slurry.
Keywords :
Anodes; Cathodes; Conductivity; Current; Electrochemical processes; Electrodes; Planarization; Slurries; Voltage; Water;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546932
