Title :
LSI capability demonstration of an 0.15 /spl mu/m-0.3 /spl mu/m GaAs HEMT and PM-HEMT 3 level metallization E/D-technology for mixed signal circuits
Author :
Thiede, A. ; Lao, Z. ; Lienhart, H. ; Sedler, M. ; Seibel, J. ; Hornung, J. ; Schneider, J. ; Kaufel, G. ; Bronner, W. ; Kohler, K. ; Jakobus, T. ; Schlechtweg, M.
Author_Institution :
Fraunhofer-Inst. for Appl. Solid-State Phys., Freiburg, Germany
Abstract :
A 16/spl times/16 bit parallel multiplier based on a 26 k sea-of-gates has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as well as three levels of gold metallization for high integration complexity. To prove the high speed performance, a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; frequency dividers; gallium arsenide; gold; integrated circuit metallisation; large scale integration; logic arrays; mixed analogue-digital integrated circuits; multiplying circuits; 0.15 micron; 36 to 60 GHz; Au; Au metallization; GaAs; GaAs HEMT E/D-technology; GaAs PHEMT E/D technology; LSI capability demonstration; digital dynamic frequency divider; high speed performance; mixed signal circuits; parallel multiplier; pseudomorphic T-gate HEMTs; sea-of-gates; three-level metallization E/D-technology; Circuits; FETs; Gallium arsenide; Gold; HEMTs; Large scale integration; Logic testing; Metallization; Millimeter wave technology; Routing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722626
