DocumentCode :
1904709
Title :
A Novel Isolation Scheme for Implementation in Very High Density AMG EPROM and FLASH EEPROM Arrays
Author :
Wolstenholme, Graham R ; Bergemont, Albert
Author_Institution :
National Semiconductor, Santa Clara, CA 95052, USA
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
253
Lastpage :
256
Abstract :
In this paper a novel isolation scheme for implementation in alternate metal virtual ground (AMG) EPROM and Flash EEPROM arrays is described. It is shown that, unlike the conventional LOCOS isolation, the new isolation scheme allows the AMO concept to be scaled below 0.6¿m geometries. Electrical results are presented for arrays with the new isolation scheme.
Keywords :
Density measurement; EPROM; Geometry; Isolation technology; Length measurement; Microelectronics; Particle measurements; Read only memory; Thickness measurement; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435174
Link To Document :
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