Title :
ALD growth of a mixed-phase novel barrier for seedless copper electroplating applications
Author :
Kumar, S. ; Xin, H.L. ; Ercius, P. ; Muller, D.A. ; Eisenbraun, E.
Author_Institution :
School of Applied and Engineering Physics, Cornell University, NY, USA, College of Nanoscale Science and Engineering, The University at Albany-SUNY, NY, USA
Abstract :
A novel plasma enhanced atomic layer deposition (PEALD)-grown mixed-phase/nano-laminate barrier has been developed which combines the robust barrier properties of TaN with direct plate characteristics of Ru. It was observed that the mixed phase barrier as thin as 2-5 nm can be designed to act both as robust copper barrier and as a copper direct plating layer by modulating the Ru: Ta ratio in the deposited films. The filling characteristics in sub-50 nm features were found to be equivalent to those of conventionally copper-seeded interconnect structures.
Keywords :
Adhesives; Atherosclerosis; Atomic layer deposition; Copper; Design engineering; Dielectric substrates; Electrons; Plasma applications; Plasma properties; Robustness;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546936
