Full calculations of field emission from Al/sub x/Ga/sub 1-x/N

The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is fully calculated as a function of a stoichiometric composition x. From the measured values of n, the carrier concentration n is numerically obtained as a function of x. Almost all the other material parameters of Al/sub x/Ga/sub 1-x/N are obtained as a function of x by averaging those of GaN and AlN. Then we use a fully exact scheme to calculate j as a function of x for x /spl les/ 0.7. The obtained plot of j versus x exhibits a peak in the range of transition from semiconductor to insulator. It is found that the peak position varies with the electron affinity /spl chi/ and the applied field F. The peak becomes more apparent and moves toward the smaller x as /spl chi/ decreases and F increases.